詳細

型番: TSM60NB1R4CP
カテゴリー:
個別半導体
Ciss (pF): 257.3
Configuration: Single
Coss (pF): 41.5
Description: 600V, 3A, Single N-Channel Power MOSFET
ID Max. (A): 3
MSL: 3
Package: TO-252 (D-PAK)
Qg (nC) @ 10V: 7.12
Qgd (nC): 1.62
Qgs (nC): 3.52
RDS(ON) @ 10V Max. (mΩ): 1400
RDS(ON) @ 10V Typ. (mΩ): 1000
Status: Active
TJ Max. (°C): 150
Technology: Super Junction G2
Type: N-Channel
VDS (V): 600
VGS ±(V): 30
VGS(th) Max. (V): 4
VGS(th) Min. (V): 2
VGS(th) Typ. (V): 3.3
Replaces: TSM60N1R4CP
Documents:
データシート
TSM60NB1R4CP_A1608
Application Note
AN-1001: Understanding Power MOSFET Parameters
AN-1002: How to Check SOA of MOSFET