詳細

型番: TSM4ND60CI
カテゴリー:
個別半導体
Ciss (pF): 582
Configuration: Single
Coss (pF): 38
Crss (pF): 1
Description: 600V, 4A, Single N-Channel Power MOSFET
ID Max. (A): 4
Package: ITO-220
Qg (nC) @ 10V: 17.2
Qgd (nC): 7.8
Qgs (nC): 2.9
RDS(ON) @ 10V Max. (mΩ): 2200
RDS(ON) @ 10V Typ. (mΩ): 1700
Status: Active
TJ Max. (°C): 150
Technology: Planar
Type: N-Channel
VDS (V): 600
VGS ±(V): 30
VGS(th) Max. (V): 3.8
VGS(th) Min. (V): 2.5
VGS(th) Typ. (V): 3
Documents:
データシート
TSM4ND60CI_A1804
Application Note
AN-1001: Understanding Power MOSFET Parameters
AN-1002: How to Check SOA of MOSFET