Part Number: TSM3N80CH 800V, 3A, Single N-Channel Power MOSFET
仕様書
Category 個別半導体
MOSFET
Nチャンネル
Package TO-251 (I-PAK)
Type N-Channel
Technology Planar
Configuration Single
Status Active
AEC-Q No
VDS (V) 800
VGS ±(V) 30
ID Max. (A) 3
TJ Max. (°C) 150
RDS(ON) @ 10V Max. (mΩ) 4200
RDS(ON) @ 10V Typ. (mΩ) 3300
RDS(ON) @ 4.5V Max. (mΩ) -
RDS(ON) @ 4.5V Typ. (mΩ) -
RDS(ON) @ 2.5V Max. (mΩ) -
RDS(ON) @ 2.5V Typ. (mΩ) -
RDS(ON) @ 1.8V Max. (mΩ) -
RDS(ON) @ 1.8V Typ. (mΩ) -
Qg (nC) @ 10V 19
Qg (nC) @ 4.5V -
Qgd (nC) 7.6
Qgs (nC) 4
Ciss (pF) 696
Coss (pF) 65
Crss (pF) 10.2
MSL -
VGS(th) Max. (V) 4
VGS(th) Min. (V) 2
VGS(th) Typ. (V) -
データシート
TSM3N80_F1706.pdf Download
リーソース
TSM3N80CH

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