Part Number: TSM300NB06DCR 60V, 25A, Dual N-Channel Power MOSFET
仕様書
Category 個別半導体
MOSFET
Nチャンネル
Package PDFN56 Dual
Type N-Channel
Technology Trench
Configuration Dual
Status Active
AEC-Q No
VDS (V) 60
VGS ±(V) 20
ID Max. (A) 25
TJ Max. (°C) 150
RDS(ON) @ 10V Max. (mΩ) 30
RDS(ON) @ 10V Typ. (mΩ) 25
RDS(ON) @ 4.5V Max. (mΩ) -
RDS(ON) @ 4.5V Typ. (mΩ) -
RDS(ON) @ 2.5V Max. (mΩ) -
RDS(ON) @ 2.5V Typ. (mΩ) -
RDS(ON) @ 1.8V Max. (mΩ) -
RDS(ON) @ 1.8V Typ. (mΩ) -
Qg (nC) @ 10V 17
Qg (nC) @ 4.5V -
Qgd (nC) 4
Qgs (nC) 6
Ciss (pF) 1079
Coss (pF) 68
Crss (pF) 16
MSL 1
VGS(th) Max. (V) 4.5
VGS(th) Min. (V) 2.5
VGS(th) Typ. (V) 3.2
データシート
TSM300NB06DCR_A1908.pdf Download
リーソース
外形パッケージ PDFN56 Dual
TSM300NB06DCR
特徴と強み
● Low RDS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21

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