詳細

型番: TSM250N02DCQ
カテゴリー:
個別半導体
Ciss (pF): 535
Configuration: Dual
Coss (pF): 60
Crss (pF): 34
Description: 20V, 5.8A, Dual N-Channel Power MOSFET
ID Max. (A): 5.8
MSL: 3
Package: TDFN 2x2
Qg (nC) @ 4.5V: 7.7
Qgd (nC): 2.4
Qgs (nC): 0.9
RDS(ON) @ 1.8V Max. (mΩ): 55
RDS(ON) @ 1.8V Typ. (mΩ): 39
RDS(ON) @ 2.5V Max. (mΩ): 35
RDS(ON) @ 2.5V Typ. (mΩ): 27
RDS(ON) @ 4.5V Max. (mΩ): 25
RDS(ON) @ 4.5V Typ. (mΩ): 20
Status: Active
TJ Max. (°C): 150
Technology: Trench
Type: N-Channel
VDS (V): 20
VGS ±(V): 10
VGS(th) Max. (V): 0.8
VGS(th) Min. (V): 0.4
VGS(th) Typ. (V): 0.6
Documents:
データシート
TSM250N02D_B15
Application Note
AN-1001: Understanding Power MOSFET Parameters
AN-1002: How to Check SOA of MOSFET