詳細

型番: TSM1NB60CH
カテゴリー:
個別半導体
Ciss (pF): 138
Configuration: Single
Coss (pF): 17.1
Crss (pF): 4.2
Description: 600V, 1A, Single N-Channel Power MOSFET
ID Max. (A): 1
Package: TO-251 (I-PAK)
Qg (nC) @ 10V: 6.1
Qgd (nC): 3.3
Qgs (nC): 1.4
RDS(ON) @ 10V Max. (mΩ): 10000
RDS(ON) @ 10V Typ. (mΩ): 8000
Status: Active
TJ Max. (°C): 150
Technology: Planar
Type: N-Channel
VDS (V): 600
VGS ±(V): 30
VGS(th) Max. (V): 4.5
VGS(th) Min. (V): 2.5
Documents:
データシート
TSM1NB60_D1706
Application Note
AN-1001: Understanding Power MOSFET Parameters
AN-1002: How to Check SOA of MOSFET