詳細

型番: TSM110NB04DCR
カテゴリー:
個別半導体
Ciss (pF): 1506
Configuration: Dual
Coss (pF): 144
Crss (pF): 75
Description: 40V, 48A, Dual N-Channel Power MOSFET
ID Max. (A): 48
MSL: 1
Package: PDFN56 Dual
Qg (nC) @ 10V: 25
Qgd (nC): 6
Qgs (nC): 7
RDS(ON) @ 10V Max. (mΩ): 11
RDS(ON) @ 10V Typ. (mΩ): 8.5
Status: Active
TJ Max. (°C): 150
Technology: Trench
Type: N-Channel
VDS (V): 40
VGS ±(V): 20
VGS(th) Max. (V): 4
VGS(th) Min. (V): 2
VGS(th) Typ. (V): 2.9
Documents:
データシート
TSM110NB04DCR_A1908