詳細

型番: TSM10ND60CI
カテゴリー:
個別半導体
Ciss (pF): 1928
Configuration: Single
Coss (pF): 114
Crss (pF): 10
Description: 600V, 10A, Single N-Channel Power MOSFET
ID Max. (A): 10
Package: ITO-220
Qg (nC) @ 10V: 38
Qgd (nC): 11
Qgs (nC): 9
RDS(ON) @ 10V Max. (mΩ): 600
RDS(ON) @ 10V Typ. (mΩ): 510
Status: Active
TJ Max. (°C): 150
Technology: Planar
Type: N-Channel
VDS (V): 600
VGS ±(V): 30
VGS(th) Max. (V): 3.8
VGS(th) Min. (V): 2.5
VGS(th) Typ. (V): 2.9
Documents:
データシート
TSM10ND60CI_A1807
Application Note
AN-1001: Understanding Power MOSFET Parameters
AN-1002: How to Check SOA of MOSFET