Part Number: TSM80N1R2CH 800V, 5.5A, Single N-Channel Power MOSFET
Specifications
Category Discrete Devices
MOSFET
Super Junction
Package TO-251 (I-PAK)
Type N-Channel
Technology Super Junction
Configuration Single
Status Active
AEC-Q No
VDS (V) 800
VGS ±(V) 30
ID Max. (A) 5.5
TJ Max. (°C) 150
RDS(ON) @ 10V Max. (mΩ) 1200
RDS(ON) @ 10V Typ. (mΩ) 900
RDS(ON) @ 4.5V Max. (mΩ) -
RDS(ON) @ 4.5V Typ. (mΩ) -
RDS(ON) @ 2.5V Max. (mΩ) -
RDS(ON) @ 2.5V Typ. (mΩ) -
RDS(ON) @ 1.8V Max. (mΩ) -
RDS(ON) @ 1.8V Typ. (mΩ) -
Qg (nC) @ 10V 19.4
Qg (nC) @ 4.5V -
Qgd (nC) 9.6
Qgs (nC) 3.4
Ciss (pF) 685
Coss (pF) 62
Crss (pF) -
MSL -
VGS(th) Max. (V) 4
VGS(th) Min. (V) 2
VGS(th) Typ. (V) -
Datasheet
TSM80N1R2_B1706.pdf Download
Resources
Package Outline Dimensions TO-251 (I-PAK)
TSM80N1R2CH

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