******************************************************* * Taiwan Semiconductor * TQM300NB06DCR * 60V,27A N-Channel Power MOSFET * Date: 2020-07-31 ******************************************************* .SUBCKT TQM300NB06DCR D G S **+params: EP= {EP} M1 3 GX S S NMOS W= 206842u L= 0.25u M2 S GX S D PMOS W= 1806842u L= 0.25u R1 D 3 2.1m TC=28m 250u CGS GX S 1n *CGD GX D 60p RG G GY 1.5 RTCV 100 S 1.28e6 TC=-2.6m 10u ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3.2e-8 + RS = 0 KP = 100e-6 NSUB = 100e+16 THETA= 1.6 VTO= 4.2 + KAPPA = 20 NFS = 1.4e+12 Rds=11e+10 + LD = 0 IS = 0 TPG = 1 ) + CGDO = 42p *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 2.2e-8 +NSUB = 3.5e+15 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 20e-9 T_MEASURED = 25 BV = 72.714 IBV=250u TBV1=1100e-6 TBV2=-0.1u +RS = 3.3m N = 1.1 IS = 15e-12 +EG = 1.199 XTI = 1.026e+00 TRS1 = 4.2m +CJO = 170p VJ = 30.5 M = 1.885 ) **************************************************************** .ENDS