******************************************************* * Taiwan Semiconductor * TQM250NB06CR * 60V,32A N-Channel Power MOSFET * Date: 2020-06-15 ******************************************************* .SUBCKT TQM250NB06CR D G S **+params: EP= {EP} M1 3 GX S S NMOS W= 1817894u L= 0.35u M2 S GX S D PMOS W= 1817894u L= 0.8u R1 D 3 3.9m TC= 180e-4 75u CGS GX S 1.2n CGD GX D 5p RG G GY 1.5 RTCV 100 S 0.8e6 TC=-4.7m 18u ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 7.5e-8 + RS = 0 KP = 15e-6 NSUB = 0.1e+17 THETA= 1 VTO= 3.8 + KAPPA = 0.5 NFS = 1.37e+12 Rds=31e+9 + LD = 0 IS = 0 TPG = 1 ) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 7.5e-8 +NSUB = 1e+15 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 18.5e-9 T_MEASURED = 25 BV = 73.399 IBV=250u TBV1=1100e-6 TBV2=-0.1u +RS = 3.1m N = 1.064e+00 IS = 10e-12 +EG = 1.149 XTI = 1.026e+00 TRS1 = 2.410e-03 +CJO = 88p VJ = 32.5 M = 0.7 ) **************************************************************** .ENDS