******************************************************* * Taiwan Semiconductor * B0530WS * 200mW,30V Schottky Barrier Diode * Date: 2020-04-21 ******************************************************* .MODEL B0530WS D + IS=1.7158E-6 + N=1.0635 + RS=.1412 + IKF=32.733 + CJO=145.71E-12 + M=.48768 + VJ=.39365 + ISR=1.5908E-6 + NR=4.9950 + BV=30 + IBV=0.5E-3 + TT=20.224E-9 *******************************************************