Taiwan Semiconductor

Automotive 45–120V Trench Schottky Rectifiers Rated to Tj 175°C

claire.chen — Thu, 18 Dec 2025 06:46:25 +0000

Introducing our new automotive-grade Trench Schottky product portfolio, available in SOD-123W, SOD-128, Thin SMA, and Micro SMA packages. Designed to meet the rigorous quality and reliability demands of automotive applications, this product family supports junction temperatures up to 175°C and delivers extremely low leakage performance. The portfolio covers breakdown voltages from 45V to 120V and forward current ratings from 1A to 5A across various package options, all fully AEC-Q101 qualified.

Key Features

AEC-Q101 qualified
Maximum junction temperature T_J 175°C
High surge current capability
Low power loss, high efficiency
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free

Applications

DC/DC converter
Freewheeling diodes
Reverse battery protection
Car lighting
ADAS system
Camera modules
Telematics control units

Product Portfolio

Part Number	Package	I_F max (A)	V_RRM min (V)	T_J 25°C		T_J 125°C		T_J 25°C	T_J 125°C	T_J 25°C
Part Number	Package	I_F max (A)	V_RRM min (V)	V_F typ (V)	V_F max (V)	V_F typ (V)	V_F max (V)	I_R max (μA)	I_R max (mA)	I_FSM max (A) @ 8.3ms
TSSW1M45H	SOD-123W	1	45	0.5	0.55	0.4	0.45	10	2	50
TSSW2M45H	SOD-123W	2		0.56	0.61	0.49	0.54	10	2	50
TSSW3M45H	SOD-123W	3		0.51	0.58	0.43	0.5	100	15	70
TSAL3M45H	Thin SMA	3		0.5	0.58	0.41	0.49	100	15	120
TSAL5M45H	Thin SMA	5		0.53	0.61	0.44	0.52	30	10	150
TSFS3M45H	SOD-128	3		0.5	0.58	0.41	0.49	100	15	120
TSFS5M45H	SOD-128	5		0.53	0.61	0.44	0.52	30	10	150
TSSW1M60H	SOD-123W	1	60	0.54	0.61	0.46	0.53	10	2	50
TSSW2M60H	SOD-123W	2		0.63	0.7	0.57	0.64	10	2	50
TSSW3M60H	SOD-123W	3		0.58	0.64	0.52	0.58	30	15	70
TSAL3M60H	Thin SMA	3		0.56	0.62	0.5	0.56	30	15	120
TSAL5M60H	Thin SMA	5		0.58	0.66	0.51	0.59	30	10	150
TSFS3M60H	SOD-128	3		0.56	0.62	0.5	0.56	30	15	120
TSFS5M60H	SOD-128	5		0.58	0.66	0.51	0.59	30	10	150
TSSW1H100H	SOD-123W	1	100	0.67	0.73	0.56	0.62	1	0.5	35
TSSW2H100H	SOD-123W	2		0.76	0.83	0.64	0.71	1	0.5	35
TSSW3H100H	SOD-123W	3		0.7	0.77	0.59	0.66	5	2	60
TSAL3H100H	Thin SMA	3		0.68	0.75	0.57	0.64	5	2	95
TSAL5H100H	Thin SMA	5		0.69	0.76	0.58	0.65	10	2	125
TSFS3H100H	SOD-128	3		0.68	0.75	0.57	0.64	5	2	95
TSFS5H100H	SOD-128	5		0.69	0.76	0.58	0.65	10	2	125
TSU1H100H	Micro SMA	1		0.67	0.74	0.55	0.61	2	1	40
TSU2H100H	Micro SMA	2		0.76	0.83	0.63	0.69	2	1	40
TSSW1H120H	SOD-123W	1	120	0.73	0.79	0.59	0.65	1	0.5	35
TSSW2H120H	SOD-123W	2		0.8	0.86	0.66	0.72	1	0.5	35
TSSW3H120H	SOD-123W	3		0.75	0.82	0.61	0.68	5	2	60
TSAL3H120H	Thin SMA	3		0.73	0.82	0.6	0.69	5	2	95
TSAL5H120H	Thin SMA	5		0.73	0.81	0.6	0.68	10	2	125
TSFS3H120H	SOD-128	3		0.73	0.82	0.6	0.69	5	2	95
TSFS5H120H	SOD-128	5		0.73	0.81	0.6	0.68	10	2	125
TSU1H120H	Micro SMA	1		0.72	0.79	0.58	0.64	2	1	40
TSU2H120H	Micro SMA	2		0.79	0.87	0.65	0.72	2	1	40

The post Automotive 45–120V Trench Schottky Rectifiers Rated to Tj 175°C first appeared on Taiwan Semiconductor.

Automotive Bi Directional ESD Protection Diode for CAN BUS FD

claire.chen — Tue, 16 Dec 2025 01:00:24 +0000

The TESDA24VB6P02CX, designed for CAN Bus FD (CAN with Flexible Data-Rate) safeguards differential communication lines from electrostatic discharge, surge pulses, electromagnetic interference, and fast transient disturbances commonly encountered in automotive and industrial environments. Because CAN-FD supports significantly higher data rates—typically from 5 Mbps to 8 Mbps—the protection device must feature extremely low parasitic capacitance so it does not load the bus, distort the differential eye diagram, or slow signal edges.

With its ultra-low capacitance and robust surge capability, the TESDA24VB6P02CX ensures clean, stable CAN-FD communication even in harsh automotive conditions such as load dump, inductive switching, and ESD events. This allows engineers to achieve higher data-rate margins, reduce EMI design risk, and enhance overall system reliability without compromising signal integrity—an increasingly critical requirement in modern vehicle architectures.

Key Features

AEC-Q101 qualified
ESD protection for 2 lines with bi-directional configuration
Provides ESD protection for each channel to
IEC61000-4-2 (ESD): ±20kV (air), ±20kV (contact)
IEC61000-4-5 (Lightning): 2.6A (8/20μs)
Suitable for operating voltages of 24V and below
Protects I/O lines or power lines

Product Portfolio

Part Number	V_WM	C_J Max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDA24VB6P02CX	24V	6pF	20KV	2.6A

The post Automotive Bi Directional ESD Protection Diode for CAN BUS FD first appeared on Taiwan Semiconductor.

1200V Low-Loss Diodes Now Offered in High-Demand Package Options

claire.chen — Wed, 12 Nov 2025 08:17:34 +0000

Taiwan Semiconductor (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces its new 1200V low-loss diodes for power electronics systems.

The current rating are from 15-60A with ThinDPAK, D2PAK-D and TO-247BD packages available.

The low V_F reduces DC conduction losses to achieve greater power efficiencies. TSC provides SPICE models, thermal models and 3D CAD files on the TSC website to support design simulation.

Engineered for demanding, high-temperature operation, these diodes offer a maximum junction temperature(T_J) of 175°C. This exceptional thermal performance, combined with the low conduction loss, makes them ideal for enhancing reliability and minimizing the heatsink requirements in high-density applications like EV charging and server power supplies.

Applications range from three-phase AC/DC converters, totem pole bridgeless topologies and other power electronics applications such as server power, battery charging, networking, data-telecom, inverters and more.

Key Features

Planar Technology
Low Conduction Loss, High Efficiency
Low Leakage Current
T_J 175℃ max.

Applications

Three Phase AC to DC converters
Totem Pole Topologies
Bridgeless Topologies
Inverters
Battery Charging

Product Portfolio

Part Number	Package	Conf.	V_RRM (V)	I_F (A)	V_F Max (V)	I_FSM (A)	T_J Max (℃)	Automotive
PLAD15QH	ThinDPAK	Single	1200	15	1.3	250	175	Yes
PLDS30QH	D2PAK-D			30		400		Yes
PLAD15Q	ThinDPAK			15		250		No
PLDS30Q	D2PAK-D			30		400		No
PLAH30Q(H)	TO-247BD			30		400		Yes
PLAH60Q(H)	TO-247BD			60		600		Yes

The post 1200V Low-Loss Diodes Now Offered in High-Demand Package Options first appeared on Taiwan Semiconductor.

Super Clamp 24V Surface Mount TVS

claire.chen — Thu, 30 Oct 2025 03:15:37 +0000

SUPER CLAMP series TVS diodes with snapback characteristics features a superior optimized clamping ratio between the designated breakdown voltage and clamping voltage. And a wide operation range of -55°C to 175°C meeting the automotive applications. This optimized clamping ratio provides a lower clamping voltage to protect the circuit at a much higher peak pulse current than conventional TVS diodes.

SUPER CLAMP series of TVS delivers significantly lower clamping voltage compared to conventional TVS under the same pulse current conditions, as shown in the top figure.

Additionally, SUPER CLAMP series can handle much higher pulse currents within the same package size, such as DO-218AB: 300A v.s. 170A, making it an ideal choice for high-performance applications.

Applications

Automotive
Motor
Reverse battery protection
Car lighting
Robotic arm

Product Portfolio

Part Number	Package	V_WM (V)	V_BR (V)	Max I_PPM (A)	VC _clamping (V)
LSMC24CAH	DO-214AB (SMC)	24	29.5 – 32.5	170	24
LSMB24CAH	DO-214AA (SMB)		31.0 – 35.0	45
LTD7S24CAH	DO-218AB		26.7 – 29.5	300

Visit our blog for more information

Super Clamp TVS – Solution with extreme low clamping ratio

The post Super Clamp 24V Surface Mount TVS first appeared on Taiwan Semiconductor.

Automotive, AEC-Q101: 5000W, 10V-100V Uni- and Bi-directional TVS (Transient Voltage Suppressors)

claire.chen — Tue, 21 Oct 2025 01:00:05 +0000

To ensure maximum safety and reliability against the harshest electrical events, Taiwan Semiconductor introduces a series of 5000W SMC Transient Voltage Suppressors for automotive applications. The new 5KSMCXX Series offers high energy absorption capabilities to effectively guard against surges caused by lightning strikes and switching power supplies. The SMC package not only facilitates surface mount assembly but also provides excellent thermal dissipation in high-power applications.

Key Features

AEC-Q101 qualified
Available in Uni- and Bi-directional configurations
MSL Level 1
Meets IEC 61000-4-2 Level 4
Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b)

Applications

Switching Mode Power Supply (SMPS)
Motor for BLDC
Lighting application
Battery management system
Automotive

Product Portfolio

Part Number	Configuration	P_PPM (W)	V_WM (V)	V_BR (V)
5KSMC10AH – 5KSMC100AH	Uni-directional	5000	10 - 100	12 – 117
5KSMC10CAH – 5KSMC100CAH	Bi-directional	5000	10 - 100	12 – 117

The post Automotive, AEC-Q101: 5000W, 10V-100V Uni- and Bi-directional TVS (Transient Voltage Suppressors) first appeared on Taiwan Semiconductor.

600V SJ MOSFETs: New TOLL and PDFN88 Options for Enhanced Thermal Performance

claire.chen — Thu, 16 Oct 2025 01:26:06 +0000

600V Super Junction (SJ) family expands with new products within compact PDFN88 and robust TOLL packages. These advanced package options offer improved thermal performance, higher power density, and efficient PCB layout flexibility. Ideal for space-constrained and high-efficiency applications, they deliver enhanced reliability and performance.

Key Features

4th Generation Super Junction technology
Low gate charge capacitance
Excellent switching performance
High gate noise immunity

Applications

SMPS and server power supply
Lighting power
HV motor driver
Micro PV inverter

Product Portfolio

Part Number	Package	Voltage (V)	R_DS(on) (mΩ)	I_D (A)
TSM60NE084TL	TOLL	600	84	47
TSM60NE110TL	TOLL	600	110	30
TSM60NE110CE	PDFN88	600	110	27
TSM60NE160CE	PDFN88	600	160	21
TSM60NE180CE	PDFN88	600	180	20
TSM60NE285CE	PDFN88	600	285	16

The post 600V SJ MOSFETs: New TOLL and PDFN88 Options for Enhanced Thermal Performance first appeared on Taiwan Semiconductor.

Automotive TJ 175°C Planar Schottky Diodes

claire.chen — Wed, 17 Sep 2025 01:00:16 +0000

Taiwan Semiconductor introduces its next-generation automotive-grade planar Schottky diodes, engineered for demanding automotive environments and supporting a maximum junction temperature (TJ) up to 175°C. This product family features low leakage current and a forward current range of 1A to 10A in various package options and is AEC-Q101 qualified.

Key Features

AEC-Q101 qualified
Maximum junction temperature TJ 175°C
High surge current capability
Low power loss, high efficiency
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free

Applications

DC/DC converter
Freewheeling diodes
Reverse battery protection
Car lighting

Product Portfolio

Part Number	Package	I_F	V_R	T_J 25°C		T_J 125°C		T_J 25°C	T_J 125°C	T_J 25°C
Part Number	Package	Max. (A)	Min. (V)	V_F Typ. (V)	V_F Max. (V)	V_F Typ. (V)	V_F Max. (V)	I_R Max. (μA)	I_R Max. (mA)	I_FSM Max. (A)
SSU1H40H	Micro SMA	1	40	0.54	0.59	0.45	0.49	10	2	40
SSA1H40H	DO-214AC (SMA)	1		0.54	0.6	0.45	0.5	30	5	70
SSB1H40H	DO-214AA (SMB)	1		0.54	0.6	0.45	0.5	30	5	70
SSA2H40H	DO-214AC (SMA)	2		0.62	0.66	0.53	0.56	30	5	70
SSB2H40H	DO-214AA (SMB)	2		0.62	0.66	0.53	0.56	30	5	70
SSW2H40H	SOD-123W	2		0.62	0.66	0.53	0.56	30	5	70
SSA3H40H	DO-214AC (SMA)	3		0.56	0.6	0.48	0.51	30	5	100
SSB3H40H	DO-214AA (SMB)	3		0.56	0.6	0.48	0.51	30	5	100
SSC3H40H	DO-214AB (SMC)	3		0.56	0.6	0.48	0.51	30	5	100
SSC5H40H	DO-214AB (SMC)	5		0.58	0.61	0.5	0.53	30	5	145
SSU1H60H	Micro SMA	1	60	0.67	0.72	0.55	0.59	10	2	40
SSA1H60H	DO-214AC (SMA)	1		0.63	0.67	0.52	0.55	30	5	70
SSB1H60H	DO-214AA (SMB)	1		0.63	0.67	0.52	0.55	30	5	70
SSA2H60H	DO-214AC (SMA)	2		0.7	0.75	0.58	0.62	30	5	70
SSB2H60H	DO-214AA (SMB)	2		0.7	0.75	0.58	0.62	30	5	70
SSW2H60H	SOD-123W	2		0.7	0.75	0.58	0.62	30	5	70
SSA3H60H	DO-214AC (SMA)	3		0.7	0.74	0.58	0.61	30	5	100
SSB3H60H	DO-214AA (SMB)	3		0.7	0.74	0.58	0.61	30	5	100
SSC3H60H	DO-214AB (SMC)	3		0.7	0.74	0.58	0.61	30	5	100
SSC5H60H	DO-214AB (SMC)	5		0.72	0.75	0.6	0.63	30	5	145
SSA1H100H	DO-214AC (SMA)	1	100	0.68	0.73	0.55	0.59	10	1	70
SSB1H100H	DO-214AA (SMB)	1		0.68	0.73	0.55	0.59	10	1	70
SSA2H100H	DO-214AC (SMA)	2		0.76	0.8	0.61	0.64	10	1	70
SSB2H100H	DO-214AA (SMB)	2		0.76	0.8	0.61	0.64	10	1	70
SSW2H100H	SOD-123W	2		0.76	0.8	0.61	0.64	10	1	70
SSA3H100H	DO-214AC (SMA)	3		0.74	0.8	0.61	0.66	10	1	100
SSB3H100H	DO-214AA (SMB)	3		0.74	0.8	0.61	0.66	10	1	100
SSC3H100H	DO-214AB (SMC)	3		0.74	0.8	0.61	0.66	10	1	100
SSUP5H100H	TO-277A (SMPC4.6U)	5		0.75	0.8	0.61	0.65	10	5	150
SSUP8H100H	TO-277A (SMPC4.6U)	8		0.77	0.85	0.63	0.69	5	2	215
SSUP10H100H	TO-277A (SMPC4.6U)	10		0.77	0.81	0.64	0.67	10	3	255

The post Automotive TJ 175°C Planar Schottky Diodes first appeared on Taiwan Semiconductor.

Single-Line Uni-directional ESD Protection Diode

claire.chen — Thu, 21 Aug 2025 01:22:07 +0000

The TESDA28VU18P1Q1 is a uni-directional ESD protection diode designed to protect power interfaces, or control lines, or low-speed data lines in an electronic system. It has been specifically designed to protect sensitive electronic components connected to power and control lines from over-voltage damage by Electrostatic Discharge (ESD) and lightning.

This is an ESD protection device in an ultra small DFN1006-2LW Surface-Mounted Device (SMD) package designed to protect a single automotive in-vehicle network bus line from the damage caused by Electrostatic discharge (ESD) and other transients.

Key Features

AEC-Q101 qualified
Wettable flank
Provide ESD protection to
IEC 61000-4-2 (ESD) ±15kV (air), ±15kV(contact)
IEC 61000-4-5 (Lightning) 1.7A (8/20us)

Applications

Automotive low speed data lines
Portable Instrumentation
General Purpose I/O
Mobile & Handhelds

Product Portfolio

Part Number	Package	V_WM (V)	C_J (pF) Max.	ESD robustness (IEC61000-4-2) (kV)	IPPM at tp = 8/20μs (A)
TESDA28VU18P1Q1	DFN1006-2LW	28	18.6	15	1.7

The post Single-Line Uni-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

PerFET™ 80V and 100V Power MOSFETs

claire.chen — Wed, 30 Jul 2025 01:30:22 +0000

Taiwan Semiconductor introduces its next-generation PerFET 80V and 100V Power MOSFETs, optimized for high-frequency switching. These devices are ideal for synchronous rectification in telecom and server power supplies, as well as for industrial applications such as solar inverters, power tools, DC-DC brick converters, and power adapters.

Packaged in a compact PDFN56U package, the PerFET 80V and 100V MOSFETs feature a wettable flank design, which improves solder joint reliability and enhances automated optical inspection (AOI) accuracy. The product portfolio includes 18 variants, offering both standard gate drive (10V) and logic-level gate drive (5V) options—giving designers the flexibility to choose the optimal solution for their application.

Key Features

Reliability meets AEC-Q101 requirements
Best-in-class FOM (R_DS(on) * Q_g)
Optimized R_DS(on) for low conduction losses
Low gate charge for reduced switching losses
175°C junction temperature (T_J)
Wettable flank enhanced AOI accuracy

Applications

48V Automotive applications
SMPS, Server and Telecom power supply
DC/DC converter
BLDC motor driver
E-Fuse

Product Portfolio

Part Number	Package	V_DS (V)	R_DS(on) @ 10V Max. (mΩ)	V_GS(TH) (V)	I_D (A)	Q_g (nC) @ 10V
TSM048NH10LCR	PDFN56U	100	4.8	1.4 - 2.2	100	47
TSM048NH10CR			4.8	2.4 - 3.6	100	35
TSM075NH10LCR			7.5	1.4 - 2.2	100	36
TSM075NH10CR			7.5	2.4 - 3.6	100	22
TSM100NH10LCR			10	1.4 - 2.2	72	25
TSM100NH10CR			10	2.4 - 3.6	72	20
TSM170NH10LCR			17	1.4 - 2.2	50	17
TSM170NH10CR			17	2.4 - 3.6	50	11
TSM240NH10LCR			24	1.4 - 2.2	34	9.3
TSM240NH10CR			24	2.4 - 3.6	34	8.1
TSM250NH10LDCR	PDFN56U Dual		25	1.4 - 2.2	31	10
TSM250NH10DCR	PDFN56U Dual		25	2.4 - 3.6	31	8.4
TSM058NH08LCR	PDFN56U	80	5.8	1.4 - 2.2	100	35
TSM063NH08CR			6.3	2.4 - 3.6	100	27
TSM130NH08LCR			13	1.4 - 2.2	54	17
TSM145NH08CR			14.5	2.4 - 3.6	52	13
TSM210NH08LDCR	PDFN56U Dual		21	1.4 - 2.2	33	11
TSM230NH08DCR	PDFN56U Dual		23	2.4 - 3.6	31	9.1

The post PerFET™ 80V and 100V Power MOSFETs first appeared on Taiwan Semiconductor.

1200V Wide-Bandgap SiC Schottky Diodes with MPS design for High-Frequency, High-Reliability Applications

claire.chen — Wed, 30 Jul 2025 01:00:05 +0000

New 1200V Wide Bandgap Silicon Carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) structure, delivering outstanding performance with high forward surge current capability, low forward voltage drop, low leakage current, and low capacitive charge. These characteristics result in enhanced efficiency and robustness for high-frequency and high-voltage applications.

Available in 1A and 2A current ratings in compact SMB and low-profile SOD-128 packages, these diodes provide improved creepage distances (e.g., 3.2mm for SOD-128, 2.6mm for SMB) to ensure better electrical isolation. For higher current demands, versions rated up to 40A are offered in TO-247-3L packages, enabling system-level optimization across a wide range of power designs.

All devices are AEC-Q101 qualified and support a maximum junction temperature of 175°C, ensuring high reliability and thermal stability in demanding environments such as EV fast-charging infrastructure, energy storage systems, and industrial telecom power supplies. Additionally, their positive VF temperature coefficient simplifies thermal management, enabling predictable and stable performance in mission-critical applications.

Key Features

AEC-Q101 qualified
SOD-128 minimum creepage distance 3.2mm guaranteed by design
SMB minimum creepage distance 2.6mm guaranteed by design
Max. junction temperature 175°C
Merged PIN Schottky (MPS) design
Positive temperature coefficient on V_F
RoHS Compliant
Halogen-Free

Applications

PFC high frequency rectification
EV fast charging stations
Bootstrap and desaturated diode
Grid energy storage system (ESSs)
Uninterruptible power supplies (UPS)
Solar inverter systems
PV Microinverters
Telecom rectifiers

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F @ T_A= 25°C		I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM @10μs (A)	Q_C Typ (nC)
Part Number	Package	V_RRM (V)	I_F (A)	Typ. (V)	Max. (V)	I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM @10μs (A)	Q_C Typ (nC)
TSCDFS01120G2H	SOD-128	1200	1	1.36	1.5	3	5	256	4.3
TSCDFS02120G2H	SOD-128		2	1.37	1.5	4	15	464	10.3
TSCDB01120G2H	DO-214AA (SMB)		1	1.36	1.5	3	6	256	4.3
TSCDB02120G2H	DO-214AA (SMB)		2	1.37	1.5	4	15	464	10.3
TSCDM05120G2H	TO-252-2L		5	1.38	1.5	30	60	580	28
TSCDM08120G2H	TO-252-2L		8	1.38	1.5	30	100	677	46
TSCDM10120G2H	TO-252-2L		10	1.39	1.5	30	100	843	51
TSCDK05120G2H	TO-263-2L		5	1.38	1.5	30	60	580	28
TSCDK08120G2H	TO-263-2L		8	1.38	1.5	30	100	677	46
TSCDK10120G2H	TO-263-2L		10	1.39	1.5	30	100	920	51
TSCDK15120G2H	TO-263-2L		15	1.38	1.5	30	100	1241	74
TSCDK20120G2H	TO-263-2L		20	1.38	1.5	30	200	1320	96
TSCDT05120G2H	TO-220AC-2L		5	1.38	1.5	30	60	580	28
TSCDT08120G2H	TO-220AC-2L		8	1.38	1.5	30	100	677	46
TSCDT10120G2H	TO-220AC-2L		10	1.39	1.5	30	100	964	51
TSCDT15120G2H	TO-220AC-2L		15	1.38	1.5	30	100	1203	74
TSCDT20120G2H	TO-220AC-2L		20	1.38	1.5	30	200	1366	96
TSCDAH10120G2H	TO-247-2L		10	1.39	1.5	30	100	920	51
TSCDAH15120G2H	TO-247-2L		15	1.38	1.5	30	100	1158	74
TSCDAH20120G2H	TO-247-2L		20	1.38	1.5	30	200	1280	96
TSCDAH30120G2H	TO-247-2L		30	1.4	1.5	30	200	1360	142
TSCDAH40120G2H	TO-247-2L		40	1.42	1.5	30	200	1771	184
TSCDH10120G2H	TO-247-3L		10	1.38	1.5	30	60	580	28
TSCDH15120G2H	TO-247-3L		15	1.36	1.5	30	100	765	46
TSCDH20120G2H	TO-247-3L		20	1.39	1.5	30	100	920	51
TSCDH30120G2H	TO-247-3L		30	1.38	1.5	30	100	1158	74
TSCDH40120G2H	TO-247-3L		40	1.38	1.5	30	200	1280	96

The post 1200V Wide-Bandgap SiC Schottky Diodes with MPS design for High-Frequency, High-Reliability Applications first appeared on Taiwan Semiconductor.