Product News - Taiwan Semiconductor

PerFET™ 80V and 100V Power MOSFETs

claire.chen — Wed, 30 Jul 2025 01:30:22 +0000

Taiwan Semiconductor introduces its next-generation PerFET 80V and 100V Power MOSFETs, optimized for high-frequency switching. These devices are ideal for synchronous rectification in telecom and server power supplies, as well as for industrial applications such as solar inverters, power tools, DC-DC brick converters, and power adapters.

Packaged in a compact PDFN56U package, the PerFET 80V and 100V MOSFETs feature a wettable flank design, which improves solder joint reliability and enhances automated optical inspection (AOI) accuracy. The product portfolio includes 18 variants, offering both standard gate drive (10V) and logic-level gate drive (5V) options—giving designers the flexibility to choose the optimal solution for their application.

Key Features

Reliability meets AEC-Q101 requirements
Best-in-class FOM (R_DS(on) * Q_g)
Optimized R_DS(on) for low conduction losses
Low gate charge for reduced switching losses
175°C junction temperature (T_J)
Wettable flank enhanced AOI accuracy

Applications

48V Automotive applications
SMPS, Server and Telecom power supply
DC/DC converter
BLDC motor driver
E-Fuse

Product Portfolio

Part Number	Package	V_DS (V)	R_DS(on) @ 10V Max. (mΩ)	V_GS(TH) (V)	I_D (A)	Q_g (nC) @ 10V
TSM048NH10LCR	PDFN56U	100	4.8	1.4 - 2.2	100	47
TSM048NH10CR			4.8	2.4 - 3.6	100	35
TSM075NH10LCR			7.5	1.4 - 2.2	100	36
TSM075NH10CR			7.5	2.4 - 3.6	100	22
TSM100NH10LCR			10	1.4 - 2.2	72	25
TSM100NH10CR			10	2.4 - 3.6	72	20
TSM170NH10LCR			17	1.4 - 2.2	50	17
TSM170NH10CR			17	2.4 - 3.6	50	11
TSM240NH10LCR			24	1.4 - 2.2	34	9.3
TSM240NH10CR			24	2.4 - 3.6	34	8.1
TSM250NH10LDCR	PDFN56U Dual		25	1.4 - 2.2	31	10
TSM250NH10DCR	PDFN56U Dual		25	2.4 - 3.6	31	8.4
TSM058NH08LCR	PDFN56U	80	5.8	1.4 - 2.2	100	35
TSM063NH08CR			6.3	2.4 - 3.6	100	27
TSM130NH08LCR			13	1.4 - 2.2	54	17
TSM145NH08CR			14.5	2.4 - 3.6	52	13
TSM210NH08LDCR	PDFN56U Dual		21	1.4 - 2.2	33	11
TSM230NH08DCR	PDFN56U Dual		23	2.4 - 3.6	31	9.1

The post PerFET™ 80V and 100V Power MOSFETs first appeared on Taiwan Semiconductor.

1200V Wide-Bandgap SiC Schottky Diodes with MPS design for High-Frequency, High-Reliability Applications

claire.chen — Wed, 30 Jul 2025 01:00:05 +0000

New 1200V Wide Bandgap Silicon Carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) structure, delivering outstanding performance with high forward surge current capability, low forward voltage drop, low leakage current, and low capacitive charge. These characteristics result in enhanced efficiency and robustness for high-frequency and high-voltage applications.

Available in 1A and 2A current ratings in compact SMB and low-profile SOD-128 packages, these diodes provide improved creepage distances (e.g., 3.2mm for SOD-128, 2.6mm for SMB) to ensure better electrical isolation. For higher current demands, versions rated up to 40A are offered in TO-247-3L packages, enabling system-level optimization across a wide range of power designs.

All devices are AEC-Q101 qualified and support a maximum junction temperature of 175°C, ensuring high reliability and thermal stability in demanding environments such as EV fast-charging infrastructure, energy storage systems, and industrial telecom power supplies. Additionally, their positive VF temperature coefficient simplifies thermal management, enabling predictable and stable performance in mission-critical applications.

Key Features

AEC-Q101 qualified
SOD-128 minimum creepage distance 3.2mm guaranteed by design
SMB minimum creepage distance 2.6mm guaranteed by design
Max. junction temperature 175°C
Merged PIN Schottky (MPS) design
Positive temperature coefficient on V_F
RoHS Compliant
Halogen-Free

Applications

PFC high frequency rectification
EV fast charging stations
Bootstrap and desaturated diode
Grid energy storage system (ESSs)
Uninterruptible power supplies (UPS)
Solar inverter systems
PV Microinverters
Telecom rectifiers

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F @ T_A= 25°C		I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM @10μs (A)	Q_C Typ (nC)
Part Number	Package	V_RRM (V)	I_F (A)	Typ. (V)	Max. (V)	I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM @10μs (A)	Q_C Typ (nC)
TSCDFS01120G2H	SOD-128	1200	1	1.36	1.5	3	5	256	4.3
TSCDFS02120G2H	SOD-128		2	1.37	1.5	4	15	464	10.3
TSCDB01120G2H	DO-214AA (SMB)		1	1.36	1.5	3	6	256	4.3
TSCDB02120G2H	DO-214AA (SMB)		2	1.37	1.5	4	15	464	10.3
TSCDM05120G2H	TO-252-2L		5	1.38	1.5	30	60	580	28
TSCDM08120G2H	TO-252-2L		8	1.38	1.5	30	100	677	46
TSCDM10120G2H	TO-252-2L		10	1.39	1.5	30	100	843	51
TSCDK05120G2H	TO-263-2L		5	1.38	1.5	30	60	580	28
TSCDK08120G2H	TO-263-2L		8	1.38	1.5	30	100	677	46
TSCDK10120G2H	TO-263-2L		10	1.39	1.5	30	100	920	51
TSCDK15120G2H	TO-263-2L		15	1.38	1.5	30	100	1241	74
TSCDK20120G2H	TO-263-2L		20	1.38	1.5	30	200	1320	96
TSCDT05120G2H	TO-220AC-2L		5	1.38	1.5	30	60	580	28
TSCDT08120G2H	TO-220AC-2L		8	1.38	1.5	30	100	677	46
TSCDT10120G2H	TO-220AC-2L		10	1.39	1.5	30	100	964	51
TSCDT15120G2H	TO-220AC-2L		15	1.38	1.5	30	100	1203	74
TSCDT20120G2H	TO-220AC-2L		20	1.38	1.5	30	200	1366	96
TSCDAH10120G2H	TO-247-2L		10	1.39	1.5	30	100	920	51
TSCDAH15120G2H	TO-247-2L		15	1.38	1.5	30	100	1158	74
TSCDAH20120G2H	TO-247-2L		20	1.38	1.5	30	200	1280	96
TSCDAH30120G2H	TO-247-2L		30	1.4	1.5	30	200	1360	142
TSCDAH40120G2H	TO-247-2L		40	1.42	1.5	30	200	1771	184
TSCDH10120G2H	TO-247-3L		10	1.38	1.5	30	60	580	28
TSCDH15120G2H	TO-247-3L		15	1.36	1.5	30	100	765	46
TSCDH20120G2H	TO-247-3L		20	1.39	1.5	30	100	920	51
TSCDH30120G2H	TO-247-3L		30	1.38	1.5	30	100	1158	74
TSCDH40120G2H	TO-247-3L		40	1.38	1.5	30	200	1280	96

The post 1200V Wide-Bandgap SiC Schottky Diodes with MPS design for High-Frequency, High-Reliability Applications first appeared on Taiwan Semiconductor.

Automotive Uni and Bi-directional ESD Protection Diode

claire.chen — Mon, 21 Jul 2025 03:41:54 +0000

Taiwan Semiconductor Co. Ltd. introduces a series of ultra-small ESD protection devices for wearables and other high-density electronic products. The new TESDAx Series, features proprietary clamping to prevent overvoltage damage from ESD and lightning on control, power lines.

These ultra-small diodes are ideal for safeguarding sensitive electronics in high-density applications like portable medical devices, smart phones, and PDAs. Being AEC-Q101 qualified, the TESDAx Series delivers robust protection to IEC 61000-4-2 (ESD ±30kV air/contact), IEC 61000-4-4 (EFT 40A), and IEC 61000-4-5 (Lightning 5A). Their ultra-small packages are crucial for saving board space, ensuring reliability and superior protection for compact and high-density designs.

Key Features

AEC-Q101 qualified
Provide ESD protection to
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV(contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 5A (8/20us)
Ultra small packages save board space

Applications

Portable medical devices
Smart phones
PDAs

Product Portfolio

Part number	Package	Configuration	V_WM (V)	C_J (pF) Max.	ESD robustness (IEC61000-4-2) (kV)	I_PP at tp = 8/20μs (A)
TESDA5V0U40P1Q0	DFN0603-2L	Uni-directional	5	40	30	5
TESDA5V0B20P1Q0		Bi-directional	5	20
TESDA6V0U40P1Q0		Uni-directional	6	40
TESDA6V0B20P1Q0		Bi-directional	6	20

The post Automotive Uni and Bi-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

Introducing TSC’s New 150V & 200V Trench Schottky Rectifiers in TO-277A (SMPC4.6U)

claire.chen — Wed, 09 Jul 2025 02:21:20 +0000

Taiwan Semiconductor introduces its new 150V & 200V Trench Schottky Rectifiers in TO-277A (SMPC4.6U), featuring low forward voltage down to 0.78V and forward current ratings from 3A to 15A with AEC-Q101 qualified.

These rectifiers are ideal for high-efficiency applications like SMPS output rectification, boost PFC circuits, freewheeling diodes in automotive and telecom systems, and polarity protection. These rectifiers ensure superior performance with low forward voltage and high current capabilities, enabling compact, reliable, and energy-efficient designs for demanding customer applications.

Key Features

AEC-Q101 qualified
Max. junction temperature 150°C
High current rating from 3A to 15A
Low forward voltage
MSL moisture sensitivity level of 1, per J-STD-020
RoHS Compliant
Halogen-Free

Applications

Switching mode power supply (SMPS) 12V ~ 48V range secondary-side output rectification
Boost PFC circuit
Freewheeling diode in automotive, telecom and DC-DC converter
Polarity protection diode

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F @T_A=25°C		I_R @ T_A= 25°C Max. (μA)	I_R @ T_A= 125°C Max. (mA)	I_FSM @ 8.3 ms (A)	C_J (pF)
Part Number	Package	V_RRM (V)	I_F (A)	Typ. (V)	Max. (V)	I_R @ T_A= 25°C Max. (μA)	I_R @ T_A= 125°C Max. (mA)	I_FSM @ 8.3 ms (A)	C_J (pF)
TSUP3150H	TO-277A (SMPC4.6U)	150	3	0.78	0.85	10	5	80	140
TSUP5150H			5	0.78	0.85	10	5	125	248
TSUP8150H			8	0.78	0.85	10	5	200	395
TSUP10150H			10	0.8	0.86	10	5	200	395
TSUP12150H			12	0.78	0.85	20	5	285	520
TSUP15150H			15	0.76	0.82	30	6	400	840
TSUP8200H		200	8	0.82	0.88	10	5	200	332
TSUP10200H			10	0.85	0.9	10	5	200	332
TSUP12200H			12	0.83	0.89	20	5	285	446
TSUP15200H			15	0.8	0.86	30	6	400	782

The post Introducing TSC’s New 150V & 200V Trench Schottky Rectifiers in TO-277A (SMPC4.6U) first appeared on Taiwan Semiconductor.

Automotive AEC-Q101 Qualified Small-signal Product

claire.chen — Mon, 23 Jun 2025 02:58:17 +0000

Taiwan Semiconductor are releasing the AEC-Q101 qualified small-signal product, Including Schottky diodes, switching diodes, Zener diodes, and bipolar transistors. Small signal diodes are widely used in automotive electronics for their fast switching and compact size. They provide reverse polarity protection, enable efficient signal switching, and help with voltage clamping in sensitive systems like ADAS and infotainment. Their low forward voltage drop and suitability high-performance automotive applications.

Key Features

AEC-Q101 qualified
Manufactured in IATF 16949 certified facilities
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free

Applications

Switching circuits
Reverse polarity protection
General regulation functions
Digital system
ADAS
In Vehicle Infotainment

Schottky diodes Product Portfolio

Part Number	Package	V_R (V)	I_R (μA)	I_F Max. (mA)	V_F Max. (V)	t_rr max. (ns)
BAT54H	SOT-23	30	2	200	0.8	5
BAT54WH	SOT-323	30	2	200	0.8	5
BAT54SH	SOT-23	30	2	200	0.8	5
BAT54SWH	SOT-323	30	2	200	0.8	5
BAT54AH	SOT-23	30	2	200	0.8	5
BAT54CH	SOT-23	30	2	200	0.8	5
BAT54CWH	SOT-323	30	2	200	0.8	5
BAT42WSH	SOD-323	30	0.5	200	1	5
BAT43WSH	SOD-323	30	0.5	200	1	5
RB500V-40H	SOD-323	40	1	100	0.45	-
BAT54GWH	SOD-123	30	2	200	0.8	5
SD103AWH	SOD-123	40	5	350	0.6	10 *
SD103BWH	SOD-123	30	5	350	0.6	10 *
SD103CWH	SOD-123	20	5	350	0.6	10 *

* Typical value

Switching diodes Product Portfolio

Part Number	Package	V_RRM (V)	I_R (μA)	I_F Max. (mA)	V_F Max. (V)	t_rr max. (ns)
BAS16H	SOT-23	100	0.5	215	1.25	4
BAS21H	SOT-23	250	0.1	200	1.25	50
BAV21WH	SOD-123	250	0.1	200	1.25	50
BAW56WH	SOT-323	100	0.5	150	1.25	4
BAV70WH	SOT-323	100	0.5	215	1.25	4
BAV99WH	SOT-323	100	0.5	150	1.25	4
BAV70H	SOT-23	100	0.5	215	1.25	4
BAV99H	SOT-23	100	0.5	215	1.25	4
BAW56H	SOT-23	100	0.5	215	1.25	4
1N4148WTH	SOD-523F	100	0.5	150	1.25	4
1N4148WH	SOD-123	100	0.5	150	1.25	4
1N4148WSH	SOD-323	100	0.5	150	1.25	4
BAV23CH	SOT-23	250	0.1	225	1.25	50
BAV23SH	SOT-23	250	0.1	225	1.25	50

Zener diodes Product Portfolio

Part Number	Package	Tolerance	P_D (mW)	V_Z (V)	I_Z Max. (mA)
BZX585BxxxH Series	SOD-523F	2%	200	2.4V~24V	5
				27V~51V	2
BZT52BxxxSH series	SOD-323	2%	200	2.4V~24V	5
				27V~75V	2
BZX84CxxxH Series	SOT-23	5%	300	2.4V~24V	5
				27V~39V	2
MMSZ52xxxBH series	SOD-123	5%	500	2.4V~12V	20
				13V~75V	<9.5
BZX84JBxxxH series	SOD-323F	2%	550	2.4V~24V	5
				27V~75V	2

Bipolar transistors Product Portfolio

Part Number	Package	Polarity	V_CBO (V)	V_CEO (V)	I_C (mA)	hFE
BC817-25H	SOT-23	NPN	50	45	500	160~400
BC817-25WH	SOT-323		50	45	500	160~400
BC817-40H	SOT-23		50	45	500	250~600
BC817-40WH	SOT-323		50	45	500	250~600
BC846BH	SOT-23		80	65	100	200/290/450
BC846BSH	SOT-363		80	65	100	200/290/450
BC846BWH	SOT-323		80	65	100	200/290/450
BC847BH	SOT-23		50	45	100	200/290/450
BC847BWH	SOT-323		50	45	100	200/290/450
BC847CH	SOT-23		50	45	100	420/520/800
BC847CWH	SOT-323		50	45	100	420/520/800
BC847SH	SOT-363		50	45	100	110~630
MMBT2222AH	SOT-23		75	40	600	100~300
MMBT3904H	SOT-23		60	40	200	100~300
BC807-25H	SOT-23	PNP	-50	-45	-500	160~400
BC807-25WH	SOT-323		-50	-45	-500	160~400
BC807-40H	SOT-23		-50	-45	-500	250~600
BC807-40WH	SOT-323		-50	-45	-500	250~600
BC856BH	SOT-23		-80	-65	-100	220~475
BC856BSH	SOT-363		-80	-65	-100	220~475
BC856BWH	SOT-323		-80	-65	-100	220~475
BC857BH	SOT-23		-50	-45	-100	220~475
BC857CH	SOT-23		-50	-45	-100	420~800
BC857SH	SOT-363		-50	-45	-200	125~630
BC857WH	SOT-323		-50	-45	-100	125~800
MMBT2907AH	SOT-23		-60	-60	-600	100~300
MMBT3906H	SOT-23		-40	-40	-200	100~300

The post Automotive AEC-Q101 Qualified Small-signal Product first appeared on Taiwan Semiconductor.

1200V & 1600V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package

claire.chen — Tue, 03 Jun 2025 01:00:00 +0000

Taiwan Semiconductor, (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces additional 1200V & 1600V High Efficiency rectifiers in industry standard packages.

The parts are targeted for bootstrap and de-saturate applications for IGBT or MOSFET gate drivers in high voltage battery systems of EVs. Additional applications include alternative energy systems, metering, lighting and rectification in HV power systems.

Key Features

Low C_J
Fast t_rr -75ns max
Environmental compliance
T_J 175℃ max.
Industry standard packages

Applications

Bootstrapping
De-saturate
Snubber – clamping
Freewheeling
HV rectification
Protection – HV blocking diode

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F Max. (V)	t_rr Max.(ns)	I_FSM (A)	T_J Max (°C)
HS1Q	SMA	1200	1	1.9	75	35	175
HS1QH	SMA	1200	1	1.9	75	35	175
HS1QB	SMB	1200	1	1.9	75	35	175
HS1QBH	SMB	1200	1	1.9	75	35	175
HS1QFSNEW	SOD-128	1200	1	1.9	75	35	175
HS1QFSHNEW	SOD-128	1200	1	1.9	75	35	175
HS1QALNEW	Thin SMA	1200	1	1.9	75	35	175
HS1QALHNEW	Thin SMA	1200	1	1.9	75	35	175
HS1YNEW	SMA	1600	1	3.6	75	30	150
HS1YHNEW	SMA	1600	1	3.6	75	30	150
HS1YBNEW	SMB	1600	1	3.6	75	30	150
HS1YBHNEW	SMB	1600	1	3.6	75	30	150

The post 1200V & 1600V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package first appeared on Taiwan Semiconductor.

Automotive Bi-directional ESD Protection Diode in SOT-23 package

claire.chen — Fri, 11 Apr 2025 06:38:34 +0000

The TESDA24VB28P2CX is Bidirectional ESD-rated clamping cell to protect power interfaces, control line, or low speed data line in an electronic system. The capacitance C_J must be less than 100 pF to maintain signal integrity at the maximum data rate of 20 kbit/s. To minimize the total impact of the diode on the system, C_J should be smaller than 30 pF. It has been specifically designed to protect sensitive electronic components connected to power and control lines from over-voltage damage caused by Electrostatic Discharging (ESD) and Lightning.

Key Features

AEC-Q101 qualified
ESD protection for 2 lines with bidirectional
IEC61000-4-2 (ESD): ±30kV (air), ±30kV(contact)
IEC61000-4-5 (Lightning): 5A (8/20μs)
Suitable for 24V and below operating voltage
Protect I/O line or power line

Applications

In-vehicle network lines
Industrial control systems
CAN bus
HVAC systems

Product Portfolio

Part Number	Package	V_WM	C_J max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDA24VB28P2CX	SOT-23	24V	28pF	30KV	5A

The post Automotive Bi-directional ESD Protection Diode in SOT-23 package first appeared on Taiwan Semiconductor.

Automotive Bi-directional ESD Protection Diode

claire.chen — Mon, 31 Mar 2025 02:34:35 +0000

The TESDA24VB17P1Q1/TESDA24VB17P1M3 is designed to protect one line against system ESD Lightning pulses by clamping it to an acceptable reference. It provides bidirectional protection.

The usage of the TESDA24VB17P1Q1 is in protected line, such as data line, control line, or power line. To minimize parasitic inductance in the board traces, all path lengths connected to the pins of TESDA24VB17P1Q1/TESDA24VB17P1M3 should be kept as short as possible.

Key Features

AEC-Q101 qualified
ESD protect for 1 line with bidirectional
Suitable for 24V and below operating voltage
Protect I/O line or power line.

Applications

In-vehicle network lines
Industrial control systems
CAN bus
HVAC systems

Product Portfolio

Part number	Package	V_WM	C_J max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDA24VB17P1Q1	DFN1006-2LW	24V	17pF	30KV	5A
TESDA24VB17P1M3	SOD-323	24V	17pF	30KV	5A

The post Automotive Bi-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

600V Low Loss rectifiers in SMD and bridge packaging

claire.chen — Fri, 28 Mar 2025 01:00:59 +0000

Taiwan Semiconductor (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces 600V low loss rectification for power electronics systems.

The current ranges are from 15A to 45A in Bridge configurations and 10 to 30A with ThinDPAK and D2PAK-D packages. The low Vf reduces conduction loss to increase efficiency and power density. TSC provides SPICE, thermal and 3D mechanical models on our website to simplify designs. Target applications range from AC/DC converters in bridge, totem pole or bridgeless topologies for mains connected power electronics such as Server power, Telecom power and Charging systems.

Key Features

Planar technology
AEC-Q101 qualified
Low Vf for high efficiency
Low leakage current
# E-326243 UL certification for Bridge
T_JMax. 175℃

Applications

AC to DC converters
Totem pole topologies
Bridgeless topologies
EV and charging systems
Industrial power systems

Product Portfolio

Part Number	Package	Conf.	V_RRM (V)	I_F (A)	V_F Max. (V)	I_FSM (A)	T_J Max (°C)	Automotive
PLAD10JH	ThinDPAK	Single	600	10	1	260	175	Yes
PLDS20JH	D2PAK-D	Single	600	20	1	390	175	Yes
PLDS30JH	D2PAK-D	Single	600	30	1	450	175	Yes
PLAD10J	ThinDPAK	Single	600	10	1	260	175	No
PLDS20J	D2PAK-D	Single	600	20	1	390	175	No
PLDS30J	D2PAK-D	Single	600	30	1	450	175	No
GBUL15J	GBU	Quad	600	15	0.9@7.5A	280	175	No
GBUL25J	GBU	Quad	600	25	0.92@12.5A	390	175	No
GBJL15J	TS-6P	Quad	600	15	0.9@7.5A	280	175	No
GBJL25J	TS-6P	Quad	600	25	0.92@12.5A	390	175	No
GBJL45J	TS-6P	Quad	600	45	0.95@22.5A	620	175	No

The post 600V Low Loss rectifiers in SMD and bridge packaging first appeared on Taiwan Semiconductor.

Automotive Small-signal MOSFET

claire.chen — Thu, 27 Mar 2025 01:00:24 +0000

Key Features

AEC-Q101 qualified
Manufactured in IATF 16949 certified facilities
Advanced trench cell design
ESD protected (HBM >2kV)
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free

Applications

General purpose switching circuits
High-speed line drivers
Low-side load switches
Relay driver
ADAS system
In Vehicle Infotainment
Drop-in replacement for industry standard commercial versions

Product Portfolio

Part Number	Package	Type	Config	ESD	BV_DS (V)	V_GS (V)	I_D (mA)	V_GS(TH) (V)	R_DS(ON) typ (Ω) @10V_GS	R_DS(ON) typ (Ω) @4.5V_GS
TQM2N7002KCX	SOT-23	N-MOS	Single	≧ 2KV	60	±20	370	0.8 ~ 2.5	1.2	1.5
TQM2N7002KCU	SOT-323		Single	≧ 2KV	60	±20	320	0.8 ~ 2.5	1.2	1.5
TQM2N7002KDCU6	SOT-363		Dual	≧ 2KV	60	±20	330	0.8 ~ 2.5	1.2	1.5
TQM138KCX	SOT-23		Single	≧ 2KV	60	±20	360	0.5 ~ 1.5	1.2	1.3
TQM138KCU	SOT-323		Single	≧ 2KV	60	±20	310	0.5 ~ 1.5	1.2	1.3
TQM138KDCU6	SOT-363		Dual	≧ 2KV	60	±20	320	0.5 ~ 1.5	1.2	1.3
TQM123KCX	SOT-23		Single	≧ 2KV	100	±20	170	1.5 ~ 2.5	3.5	4.3
TQM84KCX	SOT-23	P-MOS	Single	≧ 2KV	-60	±20	-190	-0.8 ~ -2.5	1.9	2.3
TQM84KCU	SOT-323		Single	≧ 2KV	-60	±20	-160	-0.8 ~ -2.5	1.9	2.3
TQM84KDCU6	SOT-363		Dual	≧ 2KV	-60	±20	-170	-0.8 ~ -2.5	1.9	2.3
TQM2N7002CX	SOT-23	N-MOS	Single	Non ESD	60	±20	370	0.8 ~ 2.5	1.2	1.5
TQM2N7002CU	SOT-323		Single		60	±20	320	0.8 ~ 2.5	1.2	1.5
TQM2N7002DCU6	SOT-363		Dual		60	±20	330	0.8 ~ 2.5	1.2	1.5

The post Automotive Small-signal MOSFET first appeared on Taiwan Semiconductor.