{"id":16877,"date":"2024-10-21T11:13:35","date_gmt":"2024-10-21T03:13:35","guid":{"rendered":"https:\/\/web.ts.com.tw\/en\/?page_id=16877"},"modified":"2024-10-25T17:30:33","modified_gmt":"2024-10-25T09:30:33","slug":"electronica-gan-charger","status":"publish","type":"page","link":"http:\/\/www.taiwansemi.com\/en\/electronica-gan-charger\/","title":{"rendered":"Electronica – GaN Charger"},"content":{"rendered":"\t\t
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Electronica<\/h1>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t
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GaN Charger<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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Wide Bandgap (WBG) devices have recently garnered more attention as a promising alternative to Si devices. Over the past several years, high-rated GaN (Gallium Nitride) devices have rapidly emerged and been applied in various power electronics applications, such as cell phone chargers, smart home applications, data-center power, high-efficiency switching power supplies, and the renewable energy market.<\/p>

TSC offering a 650V E-HEMT (Enhancement-mode High Electron Mobility Transistors) GaN product that has high-performance transistor technology for power conversion. The achievement of reduction parasitic capacitance, and speed gate charge compared to our silicon MOSFET technology. This initial 650V E-HEMT GaN includes high transient voltage while rugged switching applications. It collocates An easy-to-implement GaN driver circuit that consists of four components for level conversion in a traditional Si MOSFET driver circuit. This simple circuit enables the 12V level shift to \u00b16V of driver GaN and is adjustable to any power level, any frequency with single, dual, or high-side and low-side topologies with any standard controller or driver. <\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t

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TSC Product<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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